DocumentCode :
3636537
Title :
Bias-controlled three-color a-Si:H detectors
Author :
M. Topic;F. Smole;J. Furlan
Author_Institution :
Fac. of Electr. Eng., Ljubljana Univ., Slovenia
Volume :
3
fYear :
1996
Firstpage :
1287
Abstract :
Analysis of TCO/PIN/TCO/PINIP/metal, which is a three-terminal three-color detector based on stacked a-SiC:H/a-Si:H heterostructures, is examined. It is sensitive to the fundamental chromatic components. Using our simulation program we optimized its geometrical dimensions. The optimized assembly exhibits a linear photocurrent/generation-rate relationship with high rejection ratios for blue, green and red colors at peak wavelengths 430, 530, 630 nm, applying /spl plusmn/1 V or more. Based on the optimisation analysis of their geometrical dimensions, the TCO/PIN/TCO/PINIP/metal structure was fabricated. Due to the stringent thickness condition, the top PIN diode does not yet provide satisfactory results, but the PINIP structure renders an excellent spectral separation for green and red color.
Keywords :
"P-i-n diodes","Photodetectors","Chemical sensors","Radio frequency","Plasma chemistry","Optical films","Atom optics","Infrared detectors","Voltage","Solid modeling"
Publisher :
ieee
Conference_Titel :
Electrotechnical Conference, 1996. MELECON ´96., 8th Mediterranean
Print_ISBN :
0-7803-3109-5
Type :
conf
DOI :
10.1109/MELCON.1996.551181
Filename :
551181
Link To Document :
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