• DocumentCode
    3636909
  • Title

    GaN-on-diamond field-effect transistors: from wafers to amplifier modules

  • Author

    D. I. Babić;Q. Diduck;P. Yenigalla;A. Schreiber;D. Francis;F. Faili;F. Ejeckam;J. G. Felbinger;L. F. Eastman

  • Author_Institution
    Group4 Labs, Inc., 13500 Stevenson Place, Suite 207, Fremont, CA 94539, USA
  • fYear
    2010
  • Firstpage
    60
  • Lastpage
    66
  • Abstract
    We describe the development and issues related to fabrication, die processing, and packaging GaN-on-diamond high-electron mobility transistors into X-band amplifier modules. We perform thermal resistance measurements on these amplifiers using liquid-crystal thermography and show that they agree with theory and previously published measurements on GaN-on-diamond devices.
  • Keywords
    "FETs","Gallium nitride","Thermal resistance","Radio frequency","Gallium arsenide","Silicon carbide","HEMTs","MODFETs","Power generation","Electronic packaging thermal management"
  • Publisher
    ieee
  • Conference_Titel
    MIPRO, 2010 Proceedings of the 33rd International Convention
  • Print_ISBN
    978-1-4244-7763-0
  • Type

    conf

  • Filename
    5533398
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3636909