DocumentCode
3637042
Title
2-D front- and back-gate potential distribution model of submicrometer VFD SONFET
Author
B. Sviličić;V. Jovanović;T. Suligoj
Author_Institution
Faculty of Maritime Studies, University of Rijeka, Studentska ulica 2, 51000, Croatia
fYear
2010
Firstpage
43
Lastpage
47
Abstract
Analytical model for the two-dimensional (2-D) front-gate and the back-gate surface potential distribution of the vertical fully-depleted (VFD) silicon-on-nothing (SON) FET is developed. The analytical expressions of the front-gate and the back-gate potential distributions are derived by solving 2-D Poisson´s equation using boundary conditions that are special for the VFD SONFET and assuming a second-order polynomial function for the potential distribution in the device body. The accuracy of the analytical model is verified by comparing the model predictions with the 2-D numerical device simulation results obtained using Medici and very good agreement is obtained.
Keywords
"Silicon on insulator technology","Analytical models","Poisson equations","Two dimensional displays","Polynomials","Insulation","Substrates","MOSFETs","Boundary conditions","Predictive models"
Publisher
ieee
Conference_Titel
MIPRO, 2010 Proceedings of the 33rd International Convention
Print_ISBN
978-1-4244-7763-0
Type
conf
Filename
5533693
Link To Document