• DocumentCode
    3637112
  • Title

    Field Effect transistors for fast terahertz detection and imaging

  • Author

    W. Knap;S. Nadar;H. Videlier;S. Boubanga-Tombet;D. Coquillat;N. Dyakonova;F. Teppe;K. Karpierz;J. Łusakowski;M. Sakowicz;D. Seliuta;I. Kasalynas;G. Valušis;S. Monfray;T. Skotnicki

  • Author_Institution
    CNRS &
  • fYear
    2010
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We present recent results on detection of terahertz radiation with nanometer size GaAs FETs and Si MOSFETs at room temperature. We demonstrate that the detection sensitivity and speed allows application of the transistors in terahertz imaging systems. At low temperatures the transistors can act as magnetic field tunable detectors.
  • Keywords
    "FETs","Optical imaging","Plasma temperature","Radiation detectors","Gallium arsenide","Plasma waves","Frequency","MOSFETs","Temperature sensors","Plasma properties"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Radar and Wireless Communications (MIKON), 2010 18th International Conference on
  • Print_ISBN
    978-1-4244-5288-0
  • Type

    conf

  • Filename
    5540478
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3637112