Millimeter wave technique for non-destructive Si wafer homogeneity characterization

Millimeter wave vector analyzer technique for non-destructive Si wafer homogeneity characterization according to resistivity distribution on the wafer area is presented. The operation of this technique is based on the local excitation of the millimeter waves in the wafer under test and measurement of the transmitted wave amplitude in the different places of the wafer. Some examples of applications of our technique for the homogeneity measurement of Si wafers produced by different companies using different fabrication methods are presented. The space resolution of the measurement is less than 1 mm². The homogeneity measurement and mapping time is about 1 min.