Title :
Passive devices on GaAs substrate for MMICs applications
Author :
A. Muller;S. Simion;M. Dragoman;S. Iordanescu;I. Petrini;C. Anton;D. Vasilache;V. Avramescu;A. Coraci;F. Craciunoiu
Author_Institution :
Res. Inst. for Electron. Components, Bucharest, Romania
Abstract :
The paper presents the manufacturing and the measurements of a few type of the passive components dedicated to GaAs based MMICs. Mesa type resistors (with values in the range of 50...1000 /spl Omega/) were manufactured on a 0.15 /spl mu/m thick n/sup -/ layer (10/sup 17/) cm/sup -3/ grown on SI GaAs. Also, rectangular spiral inductors, loop inductors and interdigitated capacitor structures were realized using AuGe deposition on GaAs SI substrate and lift-off metallization technique. The computed values for the microwave parameters of the manufactured components are in good agreement with the experimental ones.
Keywords :
"Gallium arsenide","MMICs","Resistors","Etching","Ohmic contacts","Capacitors","Conductivity","Capacitance","Dielectric substrates","Impurities"
Conference_Titel :
Semiconductor Conference, 1996., International
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557335
