• DocumentCode
    3637903
  • Title

    Energy capability improvement of large DMOS transistors by adaptive current redistribution

  • Author

    Dragoş Costăchescu;Martin Pfost

  • Author_Institution
    Infineon Technologies Romania, IFRO ATV TM, Blvd. D. Pompeiu Nr. 6, 020335, Bucharest, Romania
  • fYear
    2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Energy capability of DMOS transistors, e.g. in automotive applications, has become an important topic nowadays. This is because advanced technologies now allow significantly shrunken devices that reach their temperature limit already at low energy levels due to their smaller size. In this paper, a new adaptive technique by which the current densities inside the device are dynamically adjusted is proposed. It consists in dividing the DMOS into several (independently controllable) regions and using a feedback circuit which controls individual power densities according to temperatures measured by small sensors embedded in different regions of the device. The result is a more uniform temperature distribution across the active area which allows an energy capability improvement between 9.4% and 41%, depending on the operating conditions.
  • Keywords
    "Temperature sensors","Transistors","Logic gates","Temperature measurement","Temperature distribution","Feedback circuits"
  • Publisher
    ieee
  • Conference_Titel
    Ph.D. Research in Microelectronics and Electronics (PRIME), 2010 Conference on
  • Print_ISBN
    978-1-4244-7905-4
  • Type

    conf

  • Filename
    5587165