DocumentCode
3638176
Title
Three-dimensional simulation of focused ion beam processing using the level set method
Author
Otmar Ertl;Lado Filipović;Siegfried Selberherr
Author_Institution
Institute for Microlectronics, TU Wien, Guß
fYear
2010
Firstpage
49
Lastpage
52
Abstract
Three-dimensional simulations of focused ion beam milling, which use the level set method for surface evolution, are presented for the first time. This approach allows the inherent description of topological changes. The surface rates are calculated using Monte Carlo ray tracing in order to incorporate shadowing as well as redeposition. Parallelization is used to reduce the computation time.
Keywords
"Surface topography","Ion beams","Computational modeling","Pixel","Surface treatment","Milling","Ray tracing"
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
ISSN
1946-1569
Print_ISBN
978-1-4244-7701-2
Type
conf
DOI
10.1109/SISPAD.2010.5604573
Filename
5604573
Link To Document