• DocumentCode
    3638176
  • Title

    Three-dimensional simulation of focused ion beam processing using the level set method

  • Author

    Otmar Ertl;Lado Filipović;Siegfried Selberherr

  • Author_Institution
    Institute for Microlectronics, TU Wien, Guß
  • fYear
    2010
  • Firstpage
    49
  • Lastpage
    52
  • Abstract
    Three-dimensional simulations of focused ion beam milling, which use the level set method for surface evolution, are presented for the first time. This approach allows the inherent description of topological changes. The surface rates are calculated using Monte Carlo ray tracing in order to incorporate shadowing as well as redeposition. Parallelization is used to reduce the computation time.
  • Keywords
    "Surface topography","Ion beams","Computational modeling","Pixel","Surface treatment","Milling","Ray tracing"
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4244-7701-2
  • Type

    conf

  • DOI
    10.1109/SISPAD.2010.5604573
  • Filename
    5604573