DocumentCode :
3638811
Title :
Evaluation of selected diagnostic variables for the purpose of assessing the ageing effects in high-power IGBTs
Author :
Wojciech Sleszynski;Janusz Nieznanski;Artur Cichowski;Jarosław Luszcz;Andrzej Wojewodka
Author_Institution :
Gdansk University of Technology, Faculty of Electrical and Control Engineering, Poland
fYear :
2010
Firstpage :
821
Lastpage :
825
Abstract :
A method is presented and discussed whereby to evaluate two basic diagnostic variables that can be used in the assessment of the health of high-power IGBT packs. The proposed approach attempts to adapt a laboratory-grade method known from the literature for the use on board electric traction vehicles. The diagnostic variables in question are the junction-to-case thermal resistance and the collector-emitter saturation voltage. These variables can be used in the assessment of the depth of IGBT structure delamination and wire-bond lift-off. The proposed approach has been partially validated by experiment.
Keywords :
"Temperature measurement","Voltage measurement","Current measurement","Junctions","Insulated gate bipolar transistors","Pulse measurements","Transistors"
Publisher :
ieee
Conference_Titel :
Industrial Electronics (ISIE), 2010 IEEE International Symposium on
ISSN :
2163-5137
Print_ISBN :
978-1-4244-6390-9
Electronic_ISBN :
2163-5145
Type :
conf
DOI :
10.1109/ISIE.2010.5637327
Filename :
5637327
Link To Document :
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