Disruptive ultra-low-power SOI CMOS circuits towards μW medical sensor implants

In this paper, we propose disruptive circuit design techniques for ultra-low-power (ULP) medical sensor implants. They use unique CMOS blocks to build ULP diodes and transistors that are implemented with ultra-low-Vt devices in 0.15µm fully-depleted SOI CMOS, without process modification. Using these techniques, we propose a highly-efficient power-management unit and a 1.1µW interface for capacitive sensors.