DocumentCode
3638918
Title
Response time distribution. A way to describe the photocurrent transient
Author
P. Popovic;S. Grebner;E. Bassanese;F. Smole;J. Furlan;R. Schwarz
Author_Institution
Fac. of Electr. Eng., Ljubljana Univ., Slovenia
fYear
1996
Firstpage
1145
Lastpage
1148
Abstract
The authors studied the secondary photocurrent decay in thin layers of intrinsic amorphous silicon solar cells. The decay of the secondary photocurrent in the coplanar arrangement was measured and simulated in the temperature range from 140 K to room temperature. Data were analysed to obtain response times using different definitions. Instead of observing the measured and modelled transients in the time domain, they introduce an additional processing of the data leading to response time distributions. Different types of response time spectra are compared and the physical origin for the distribution of response times is discussed for Si solar cells.
Keywords
"Delay","Photoconductivity","Amorphous silicon","Temperature distribution","Time measurement","Computational modeling","Nonlinear equations","Lighting","Data analysis","Steady-state"
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
ISSN
0160-8371
Print_ISBN
0-7803-3166-4
Type
conf
DOI
10.1109/PVSC.1996.564334
Filename
564334
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