• DocumentCode
    3638918
  • Title

    Response time distribution. A way to describe the photocurrent transient

  • Author

    P. Popovic;S. Grebner;E. Bassanese;F. Smole;J. Furlan;R. Schwarz

  • Author_Institution
    Fac. of Electr. Eng., Ljubljana Univ., Slovenia
  • fYear
    1996
  • Firstpage
    1145
  • Lastpage
    1148
  • Abstract
    The authors studied the secondary photocurrent decay in thin layers of intrinsic amorphous silicon solar cells. The decay of the secondary photocurrent in the coplanar arrangement was measured and simulated in the temperature range from 140 K to room temperature. Data were analysed to obtain response times using different definitions. Instead of observing the measured and modelled transients in the time domain, they introduce an additional processing of the data leading to response time distributions. Different types of response time spectra are compared and the physical origin for the distribution of response times is discussed for Si solar cells.
  • Keywords
    "Delay","Photoconductivity","Amorphous silicon","Temperature distribution","Time measurement","Computational modeling","Nonlinear equations","Lighting","Data analysis","Steady-state"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3166-4
  • Type

    conf

  • DOI
    10.1109/PVSC.1996.564334
  • Filename
    564334