Title :
Using the Coherence Correlation Interferometry (CCI) technique for study topography of the C-Ni films deposited on porous silicon
Author :
M. Suchańska;M. Makrenek;J. Świderski
Author_Institution :
Division of Photonics and Electronic Nanomaterials, Kielce University of Technology, Al. 1000-Lecia PP No 7, 25-314, Poland
Abstract :
Possibilities of applications Coherence Correlation Interferometry technique for topological studies of microporous materials on example C-Ni films deposited on porous silicon are discussed.
Keywords :
"Scanning electron microscopy","Silicon","Films","Correlation","Coherence"
Conference_Titel :
Semiconductor Conference (CAS), 2010 International
Print_ISBN :
978-1-4244-5783-0
DOI :
10.1109/SMICND.2010.5649092
