DocumentCode :
3639415
Title :
HEMT-SAW structures for chemical gas sensors in harsh environment
Author :
I. Rýger;T. Lalinský;G. Vanko;M. Tomáška;I. Kostič;S. Haščík;M. Vallo
Author_Institution :
Institute of Electrical Engineering of the Slovak Academy of Sciences, Bratislava, Slovakia
fYear :
2010
Firstpage :
131
Lastpage :
134
Abstract :
A growing thirst for highly sensitive and sufficiently selective sensors for extremely harsh conditions can be seen. This fact excludes the use of conventional sensing devices and gives a space for Surface Acoustic Wave sensors with monolithically-integrated electronics. We have chosen the AlGaN/GaN material as a suitable material due to its excellent chemical inertness and stability of piezoelectric parameters. In this paper we test the possible HEMT transistor/SAW transducer monolithic integration and propose the design of an oscillator based on SAW.
Keywords :
"HEMTs","Surface acoustic waves","Oscillators","Chemicals","Sensors","Gallium nitride","Aluminum gallium nitride"
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on
Print_ISBN :
978-1-4244-8574-1
Type :
conf
DOI :
10.1109/ASDAM.2010.5666317
Filename :
5666317
Link To Document :
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