Design, preparation and properties of spin-LED structures based on InMnAs

Great advances in the development of III–V diluted magnetic semiconductors materials (DMS) allow for the incorporation of ferromagnetic epitaxial layers into advanced structures. In this contribution, we report on the growth of GaAs/InMnAs layers by metalorganic vapour phase epitaxy (MOVPE) over an AlGaAs/GaAs MQW light-emitting diode structure. In particular, results of electrical and structural characterization of structures are presented. We prepared a single-phase ferromagnetic In1−xMnxAs ternary with x close to 0.075 on (100) GaAs substrates using MOVPE. The material exhibited room temperature ferromagnetic behavior with a Curie temperature close to 330K. In addition, all InMnAs ternary samples showed p-type conductivity. The ferromagnetic material was incorporated into four different AlGaAs/GaAs LED structure.