Resistive switching in RuO2/TiO2/RuO2 MIM structures for non-volatile memory application

In this paper we describe resistive switching in RuO2/TiO2/RuO2 structures. Electrodes (RuO2) were grown by metal organic chemical vapor deposition and dielectric TiO2 switching layers with rutile structure were prepared by atomic layer deposition. After proper nitrogen annealing of as-grown samples followed by an electro-forming procedure and forming procedure bipolar resistive switching was observed. For various switching parameters 100 switching cycles were performed to test retention characteristics. Ratio of high to low resistance up to 10³ was obtained for reading voltage of −0.3 V.