• DocumentCode
    3639454
  • Title

    Semi-insulating GaAs radiation detectors: PICTS study of neutron-induced defects

  • Author

    F. Dubecký;M. Ladzianský;D. Kindl;V. Nečas

  • Author_Institution
    Institute of Electrical Engineering, Slovak Academy of Sciences, Dú
  • fYear
    2010
  • Firstpage
    207
  • Lastpage
    210
  • Abstract
    Influence of damage by neutrons introduced in semi-insulating GaAs detectors is studied by current-voltage measurement and Photo-Induced Current Transient Spectroscopy (PICTS). Significant rise of the reverse current is observed at neutron fluencies exceeding 1013 ncm−2. The PICTS is used for evaluation of deep-level states in detector structures prior and after neutron bombardment. Formation of a new significant neutron-induced acceptor-like deep level with apparent energy position (EC-Et) 1.02 eV was observed for fluencies >1013 ncm−2.
  • Keywords
    "Neutrons","Detectors","Gallium arsenide","Silicon","Current measurement","Semiconductor device measurement"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on
  • Print_ISBN
    978-1-4244-8574-1
  • Type

    conf

  • DOI
    10.1109/ASDAM.2010.5667027
  • Filename
    5667027
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3639454