Title :
Atomically controlled plasma processing for epitaxial growth of group IV semiconductors
Author :
Masao Sakuraba;Junichi Murota
Author_Institution :
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Abstract :
By utilizing an electron-cyclotron-resonance plasma enhanced chemical vapor deposition (CVD) for low-temperature epitaxial growth of group IV semiconductors, atomically controlled plasma processing has been developed to achieve atomic-layer doping and heterostructure formation with nanometer-order thickness control as well as smooth and abrupt interfaces. In this paper, recent typical achievements in the plasma processing are reviewed: (1) By N and B atomic-layer formation and Si epitaxial growth on Si(100), heavy atomic-layer doping was demonstrated. Most of the incorporated N or B atoms can be confined in an about 2 nm-thick region. (2) Using a 84% relaxed Ge buffer layer formed on Si(100) by the plasma CVD, formation of a B-doped highly strained Si film with nanometer-order thickness with typical hole mobility enhancement as high as about 3 was achieved.
Keywords :
"Silicon","Plasmas","Atomic layer deposition","Argon","Strain","Surface treatment","Epitaxial growth"
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667504