Title :
A novel 75 GHz InP HEMT dynamic divider
Author :
C.J. Madden;D.R. Snook;R.L. Van Tuyl;M.V. Le;L.D. Nguyen
Author_Institution :
Solid State Technol. Lab., Hewlett-Packard Co., Palo Alto, CA, USA
fDate :
6/18/1905 12:00:00 AM
Abstract :
A novel dynamic frequency divider IC is realized by injection locking a broadly tunable push-pull oscillator. The injection locking process is explained using a simple pumped-delay model of a two-stage ring oscillator. Two different dynamic dividers were fabricated in the Hughes 0.1 /spl mu/m gate-length InP HEMT process. The first covers 15-68 GHz while the second operates over the entire band from 50 to 75 GHz.
Keywords :
"Indium phosphide","HEMTs","Frequency conversion","Design for disassembly","Laboratories","Injection-locked oscillators","Integrated circuit modeling","Delay effects","Tunable circuits and devices","Ring oscillators"
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567827
