• DocumentCode
    3639610
  • Title

    A novel 75 GHz InP HEMT dynamic divider

  • Author

    C.J. Madden;D.R. Snook;R.L. Van Tuyl;M.V. Le;L.D. Nguyen

  • Author_Institution
    Solid State Technol. Lab., Hewlett-Packard Co., Palo Alto, CA, USA
  • fYear
    1996
  • fDate
    6/18/1905 12:00:00 AM
  • Firstpage
    137
  • Lastpage
    140
  • Abstract
    A novel dynamic frequency divider IC is realized by injection locking a broadly tunable push-pull oscillator. The injection locking process is explained using a simple pumped-delay model of a two-stage ring oscillator. Two different dynamic dividers were fabricated in the Hughes 0.1 /spl mu/m gate-length InP HEMT process. The first covers 15-68 GHz while the second operates over the entire band from 50 to 75 GHz.
  • Keywords
    "Indium phosphide","HEMTs","Frequency conversion","Design for disassembly","Laboratories","Injection-locked oscillators","Integrated circuit modeling","Delay effects","Tunable circuits and devices","Ring oscillators"
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
  • ISSN
    1064-7775
  • Print_ISBN
    0-7803-3504-X
  • Type

    conf

  • DOI
    10.1109/GAAS.1996.567827
  • Filename
    567827
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3639610