N-doped GeTe as performance booster for embedded Phase-Change Memories

The commercialization of Phase-Change Memories (PCM), based on the well-known GST compound, have been recently started, tailored for consumer applications. Despite other excellent performances (i.e. low-power, scalability,…), data retention is assured up to 85°C, still limited for the automotive market segment. Alternative active material able to comply with the stringent requirements of automotive applications should possibly exhibit higher crystallization temperature (TC) as well as higher Activation Energy (EA) with respect to GST. Recent literature shows that GeTe provides better retention [1–3], while several works put in evidence how data retention is enhanced by inclusions in pure host alloys [4–6].