Title :
Characterisation of deep-level defects in semi-insulating GaAs and InP by high resolution photoinduced transient spectroscopy (HRPITS)
Author :
P. Kaminski;M. Pawlowski;R. Cwirko;M. Palczewska;R. Kozlowski
Author_Institution :
Inst. of Electron. Mater. Technol., Warsaw, Poland
Abstract :
Deep levels in undoped semi-insulating (SI) GaAs and Fe-doped SI InP investigated by photoinduced transient spectroscopy (PITS). It is demonstrated that the resolution of this method can be improved by direct computer fitting of digitally recorded photocurrent decays.
Keywords :
"Gallium arsenide","Indium phosphide","Photoconductivity","Spectroscopy","Electron mobility","Temperature","Electron traps","Electron emission","Military computing","Charge carriers"
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570926
