Title :
Properties of amorphous SiC thin films prepared by plasma enhanced chemical vapour deposition
Author :
J. Huran;A.P. Kobzev;J. Safrankova;I. Hotovy
Author_Institution :
Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
Abstract :
The properties of hydrogenated amorphous silicon carbide films prepared by plasma enhanced chemical vapour deposition were studied by combination of infrared (IR), RBS, ERD (elastic recoil detection) measurement. IR result shoved the presence Si-C, Si-H, C-H bonds. The compositions of the silicon, carbon and hydrogen in the films were found to be dependent on the preparation conditions.
Keywords :
"Plasma properties","Amorphous materials","Silicon carbide","Transistors","Plasma measurements","Plasma chemistry","Semiconductor films","Infrared detectors","Amorphous silicon","Chemicals"
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.571090
