• DocumentCode
    3640111
  • Title

    Properties of amorphous SiC thin films prepared by plasma enhanced chemical vapour deposition

  • Author

    J. Huran;A.P. Kobzev;J. Safrankova;I. Hotovy

  • Author_Institution
    Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
  • fYear
    1996
  • Firstpage
    249
  • Lastpage
    252
  • Abstract
    The properties of hydrogenated amorphous silicon carbide films prepared by plasma enhanced chemical vapour deposition were studied by combination of infrared (IR), RBS, ERD (elastic recoil detection) measurement. IR result shoved the presence Si-C, Si-H, C-H bonds. The compositions of the silicon, carbon and hydrogen in the films were found to be dependent on the preparation conditions.
  • Keywords
    "Plasma properties","Amorphous materials","Silicon carbide","Transistors","Plasma measurements","Plasma chemistry","Semiconductor films","Infrared detectors","Amorphous silicon","Chemicals"
  • Publisher
    ieee
  • Conference_Titel
    Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
  • Print_ISBN
    0-7803-3179-6
  • Type

    conf

  • DOI
    10.1109/SIM.1996.571090
  • Filename
    571090
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3640111