• DocumentCode
    3640954
  • Title

    Silicon-interposer with high density Cu-filled TSVs

  • Author

    R. Wieland;K. Zoschke;N. Jürgensen;R. Merkel;L. Nebrich;J. Wolf

  • Author_Institution
    Fraunhofer Institution for Modular Solid State Technologies - EMFT, Munich
  • fYear
    2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A silicon-interposer technology with high density Cu-filled TSVs and Cu-based redistribution layers was realized. Test structures in a process control module were used for electrical characterization.
  • Keywords
    "Through-silicon vias","Copper","Resistance","Electrical resistance measurement","Silicon","Three dimensional displays","Reliability"
  • Publisher
    ieee
  • Conference_Titel
    3D Systems Integration Conference (3DIC), 2010 IEEE International
  • Print_ISBN
    978-1-4577-0526-7
  • Type

    conf

  • DOI
    10.1109/3DIC.2010.5751469
  • Filename
    5751469
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3640954