Title :
Silicon-interposer with high density Cu-filled TSVs
Author :
R. Wieland;K. Zoschke;N. Jürgensen;R. Merkel;L. Nebrich;J. Wolf
Author_Institution :
Fraunhofer Institution for Modular Solid State Technologies - EMFT, Munich
Abstract :
A silicon-interposer technology with high density Cu-filled TSVs and Cu-based redistribution layers was realized. Test structures in a process control module were used for electrical characterization.
Keywords :
"Through-silicon vias","Copper","Resistance","Electrical resistance measurement","Silicon","Three dimensional displays","Reliability"
Conference_Titel :
3D Systems Integration Conference (3DIC), 2010 IEEE International
Print_ISBN :
978-1-4577-0526-7
DOI :
10.1109/3DIC.2010.5751469
