• DocumentCode
    3641015
  • Title

    Lanthanum Lutetium oxide integration in a gate-first process on SOI MOSFETs

  • Author

    A. Nichau;E. Durğun Özben;M. Schnee;J. M. J. Lopes;A. Besmehn;M. Luysberg;L. Knoll;S. Habicht;V. Mussmann;R. Luptak;St. Lenk;J. Rubio-Zuazo;G. R. Castro;D. Buca;Q. T. Zhao;J. Schubert;S. Mantl

  • Author_Institution
    Peter Grü
  • fYear
    2011
  • fDate
    3/1/2011 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The chemical reactions at the higher-k LaLuO3/Ti1NX/poly-Si gate stack interfaces are studied after high temperature treatment. A Ti-rich TiN metal layer degrades the gate stack performance after high temperature annealing. The gate stack containing TiN/LaLuO3 with a near stoichiometric TiN layer is stable during 1000 °C, 5s anneals. Both electrical and structural characterization methods are employed to explore the thermal stability of the gate stack. Based on these results an integration of TiN/LaLuO3 in a gatefirst MOSFET process on SOI is shown.
  • Keywords
    "Logic gates","Tin","Annealing","Silicon","MOSFETs","Chemicals","Extraterrestrial measurements"
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
  • Print_ISBN
    978-1-4577-0090-3
  • Type

    conf

  • DOI
    10.1109/ULIS.2011.5757952
  • Filename
    5757952
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3641015