Title :
A surface potential based compact model for lightly doped FD SOI MOSFETs with ultra-thin body
Author :
J. El Husseini;F. Martinez;M. Bawedin;M. Valenza;R. Ritzenthaler;F. Lime;B. Iñiguez
Author_Institution :
IES - Montpellier University - UMR CNRS 5214, Place E. Bataillon, 34095 Montpellier Cedex 5, France
fDate :
3/1/2011 12:00:00 AM
Abstract :
In this paper, a new surface potential based compact model for long channel fully depleted SOI MOSFET with lightly doped ultra-thin body is presented. The 1-D Poisson equation is solved using the appropriate boundary conditions, and a closed-form surface potential solution is proposed for the front and back surface potentials. Finally the model was compared to numerical simulations and a good agreement is observed.
Keywords :
"Mathematical model","Silicon","MOSFETs","Electric potential","Numerical models","Films","Equations"
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
Print_ISBN :
978-1-4577-0090-3
DOI :
10.1109/ULIS.2011.5757972
