Quantum simulations of electrostatics in Si cylindrical nanowire pinch-off nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations

In this work, cylindrical junctionless nanowire pinch-off FETs with a circular horizontal cross-section are simulated. Advanced simulation methods based on the self consistent solution of the Poisson equation (PE) and the 6x6 k · p Schrodinger equation (SE) (for pFETs) or the effective mass SE (for nFETs) are employed allowing us to handle quantum confinement, stress/strain, and arbitrary crystallographic orientations. Using these advanced simulation methods the change of the electrostatics in junctionless nanowire pinch-off FETs is studied when strain and/or an arbitrary crystallographic orientation is considered. In this work we consider nanowire FETs with an infinitely long channel such that the Si body of the device is homogeneous, i.e. it is taken to be translation invariant in the channel direction (z). The simulation results for both homogeneous channel nFETs and pFETs are presented.