Title :
Si ohmic contacts on N-type SiC
Author :
Stanislav Cichoň;Petr Macháč;Bohumil Barda;Marie Kudrnová
Author_Institution :
Department of Solid State Engineering, Institute of Chemical Technology, Prague, Technická
fDate :
5/1/2011 12:00:00 AM
Abstract :
Widespread Ni/SiC contact after annealing at high temperatures provides good ohmic contact. We managed to prepare Si/SiC annealed ohmic contacts with comparable qualities as Ni/SiC ones. However, the main benefit of these Si/SiC ohmic contacts lies in that they retain their ohmic properties even after they are etched off which brings grounds for promising secondary contacts. Etched contacts were analyzed by XPS and surface composition alteration was observed.
Keywords :
"Annealing","Silicon","Silicon carbide","Contacts","Conductivity","Temperature measurement","Substrates"
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Print_ISBN :
978-1-4577-0503-8
DOI :
10.1109/IITC.2011.5940323
