DocumentCode :
3641946
Title :
Temperature dependent output characteristics of Pr:YAP microchip lasers at 747 nm and 662 nm wavelengths
Author :
Martin Fibrich;Helena Jelínková;Jan Šulc;Karel Nejezchleb;Václav Škoda
Author_Institution :
Czech Technical University, Faculty of Nuclear Sciences and Physical Engineering, Bř
fYear :
2011
fDate :
5/1/2011 12:00:00 AM
Firstpage :
1
Lastpage :
1
Abstract :
In this contribution, following our previous Pr:YAP crystal investigation [2], continuous-wave Pr:YAP microchip laser systems operating at 747 and 662 nm wavelength are reported. Moreover, temperature behavior of the gain media in term of laser output properties and emission spectra are described.
Keywords :
"Laser excitation","Laser applications","Microchip lasers","Gallium nitride","Pump lasers"
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
ISSN :
Pending
Print_ISBN :
978-1-4577-0533-5
Type :
conf
DOI :
10.1109/CLEOE.2011.5942542
Filename :
5942542
Link To Document :
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