Title :
Thermal decomposition of silicon-rich oxides deposited by the LPCVD method
Author :
Davor Ristić;Mile Ivanda;Krešimir Furić;Alessandro Chiasera;Enrico Moser;Maurizio Ferrari
Author_Institution :
SMFO Lab, Istituto di fotonica e nanotecnologie (IFN-CRN) Via alia Cascata 56/C, Povo, 38123 Trento, Italy
fDate :
5/1/2011 12:00:00 AM
Abstract :
Silicon-rich oxide (SiOx, 0<;x<;2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570 °C using silane (SiH4) and oxygen as the reactant gasses. The films were annealed at temperatures of 800 °C, 900 °C, 1000 °C and 1100 °C to induce the separation of excess silicon in the SiOx films into nanosized crystalline silicon particles inside an amorphous SiOx matrix. The size of the silicon particles was determined using Raman spectroscopy.
Keywords :
"Silicon","Annealing","Phonons","Optical films","Raman scattering","Solids"
Conference_Titel :
MIPRO, 2011 Proceedings of the 34th International Convention
Print_ISBN :
978-1-4577-0996-8
