• DocumentCode
    3642575
  • Title

    Thermal decomposition of silicon-rich oxides deposited by the LPCVD method

  • Author

    Davor Ristić;Mile Ivanda;Krešimir Furić;Alessandro Chiasera;Enrico Moser;Maurizio Ferrari

  • Author_Institution
    SMFO Lab, Istituto di fotonica e nanotecnologie (IFN-CRN) Via alia Cascata 56/C, Povo, 38123 Trento, Italy
  • fYear
    2011
  • fDate
    5/1/2011 12:00:00 AM
  • Firstpage
    25
  • Lastpage
    26
  • Abstract
    Silicon-rich oxide (SiOx, 0<;x<;2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570 °C using silane (SiH4) and oxygen as the reactant gasses. The films were annealed at temperatures of 800 °C, 900 °C, 1000 °C and 1100 °C to induce the separation of excess silicon in the SiOx films into nanosized crystalline silicon particles inside an amorphous SiOx matrix. The size of the silicon particles was determined using Raman spectroscopy.
  • Keywords
    "Silicon","Annealing","Phonons","Optical films","Raman scattering","Solids"
  • Publisher
    ieee
  • Conference_Titel
    MIPRO, 2011 Proceedings of the 34th International Convention
  • Print_ISBN
    978-1-4577-0996-8
  • Type

    conf

  • Filename
    5967016
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3642575