• DocumentCode
    3642580
  • Title

    Physics-based modeling of hole mobility in ultrathin-body silicon-on-insulator MOSFETs

  • Author

    M. Poljak;V. Jovanović;T. Suligoj

  • Author_Institution
    Department of Electronics, Microelectronics, Computer and Intelligent Systems, Faculty of Electrical Engineering and Computing - University of Zagreb, Unska 3, HR-10000 Zagreb, Croatia
  • fYear
    2011
  • fDate
    5/1/2011 12:00:00 AM
  • Firstpage
    49
  • Lastpage
    54
  • Abstract
    A comprehensive study of hole mobility behavior with downscaling of silicon body thickness in single-gate ultrathin-body silicon-on-insulator MOSFETs on (100) surface is performed. We present a physics-based model that includes optical and acoustic phonon scattering, surface roughness scattering (including scattering induced by silicon thickness fluctuations) and Coulomb scattering. Although the model is based on effective mass approximation, comparison of simulation results and experimental data shows an excellent agreement, from 30 nm down to 3.8 nm-thick SOI pMOSFETs.
  • Keywords
    "Scattering","Silicon","Surface roughness","Rough surfaces","MOSFETs","Optical surface waves"
  • Publisher
    ieee
  • Conference_Titel
    MIPRO, 2011 Proceedings of the 34th International Convention
  • Print_ISBN
    978-1-4577-0996-8
  • Type

    conf

  • Filename
    5967022
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3642580