Title :
Study of photoadmittance and admittance of porous silicon layers
Author :
Andrzej Korcala;Zbigniew Łukasiak;Anna Zawadzka;Przemyslaw Płóciennik;Krzysztof Bartkiewicz;Waclaw Bała
Author_Institution :
Institute of Physics, N. Copernicus University, Grudzią
fDate :
6/1/2011 12:00:00 AM
Abstract :
In this work, we investigated electrical properties of Al/PS/p-Si structures. Admittance spectroscopy is one of the major semiconductor diagnostic techniques. Frequency, voltage and wavelengths dependencies of admittance will be analyzed in detail. It will be useful for better understanding of fundamental electrical properties of porous silicon.
Keywords :
"Silicon","Integrated circuit modeling","Admittance","Gas detectors","Spectroscopy","Capacitance","Shape"
Conference_Titel :
Transparent Optical Networks (ICTON), 2011 13th International Conference on
Print_ISBN :
978-1-4577-0881-7
Electronic_ISBN :
2161-2064
DOI :
10.1109/ICTON.2011.5971180
