Title :
Impact of random telegraph signaling noise on SRAM stability
Author :
Seng Oon Toh;Tsu-Jae King Liu;Borivoje Nikolić
Author_Institution :
Dept. of Electrical Engineering and Computer Sciences, University of California, Berkeley 94720, USA
fDate :
6/1/2011 12:00:00 AM
Abstract :
Large-signal bias and temperature dependences of random telegraph signaling (RTS) noise in transistors and their impact on the dynamic stability of 6T SRAM cells are investigated. RTS causes fluctuations in SRAM stability that are dependent on cell access history and trap characteristics. Access patterns for characterizing the worst-case and best-case dynamic stability are developed.
Keywords :
"Random access memory","Thermal stability","Temperature dependence","Transistors","Fluctuations","Circuit stability","Very large scale integration"
Conference_Titel :
VLSI Technology (VLSIT), 2011 Symposium on
Print_ISBN :
978-1-4244-9949-6
Electronic_ISBN :
2158-9682
