• DocumentCode
    3643207
  • Title

    The low frequency noise behaviour of SiC MESFETs

  • Author

    Alicja Konczakowska;Jacek Cichosz;Dariusz Dokupil;Pawel Flisikowski;Arkadiusz Szewczyk;Barbara Stawarz-Graczyk

  • Author_Institution
    Gdansk University of Technology, Faculty of Electronics, Telecommunication and Informatics, Department of Optoelectronics and Electronic Systems, 11/12 G. Narutowicza str., 80-233, Poland
  • fYear
    2011
  • fDate
    6/1/2011 12:00:00 AM
  • Firstpage
    444
  • Lastpage
    447
  • Abstract
    In the paper results of low frequency noise measurements of SiC MESFET transistors were presented. The investigations were carried out on MESFET type CRF24010 (CREE). The low frequency noise of drain current and of gate current was measured in two-channel system, separately but in the same time. The spectra of a drain current noise and of a gate current noise were evaluated, also a coefficient of coherence between these noise sources. The noise of gate current was measured in the one-channel system. The noise model of MESFET for CRF24010 transistors for low frequency was elaborated.
  • Keywords
    "Logic gates","Silicon carbide","MESFETs","Noise measurement","1f noise"
  • Publisher
    ieee
  • Conference_Titel
    Noise and Fluctuations (ICNF), 2011 21st International Conference on
  • Print_ISBN
    978-1-4577-0189-4
  • Type

    conf

  • DOI
    10.1109/ICNF.2011.5994427
  • Filename
    5994427
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3643207