Title :
The low frequency noise behaviour of SiC MESFETs
Author :
Alicja Konczakowska;Jacek Cichosz;Dariusz Dokupil;Pawel Flisikowski;Arkadiusz Szewczyk;Barbara Stawarz-Graczyk
Author_Institution :
Gdansk University of Technology, Faculty of Electronics, Telecommunication and Informatics, Department of Optoelectronics and Electronic Systems, 11/12 G. Narutowicza str., 80-233, Poland
fDate :
6/1/2011 12:00:00 AM
Abstract :
In the paper results of low frequency noise measurements of SiC MESFET transistors were presented. The investigations were carried out on MESFET type CRF24010 (CREE). The low frequency noise of drain current and of gate current was measured in two-channel system, separately but in the same time. The spectra of a drain current noise and of a gate current noise were evaluated, also a coefficient of coherence between these noise sources. The noise of gate current was measured in the one-channel system. The noise model of MESFET for CRF24010 transistors for low frequency was elaborated.
Keywords :
"Logic gates","Silicon carbide","MESFETs","Noise measurement","1f noise"
Conference_Titel :
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Print_ISBN :
978-1-4577-0189-4
DOI :
10.1109/ICNF.2011.5994427
