• DocumentCode
    3643433
  • Title

    An improvement on p-channel SOI LIGBT by adopting slit type p-drift structure

  • Author

    H. Akiyama;K. Watabe;T. Terashima;M. Okada;S. Nobuto;M. Yamawaki;T. Hirao

  • Author_Institution
    Mitsubishi Electr. Corp., Hyogo, Japan
  • fYear
    1997
  • Firstpage
    353
  • Lastpage
    356
  • Abstract
    A new p-channel slit type p-drift lateral IGBT (p-ch SD-LIGBT) is described. This device is fabricated with thick buried-oxide SOI, using 0.8 /spl mu/m CMOS process. The improvement of slit type p-drift structure makes it possible to realize excellent characteristics in the trade-off between breakdown voltage and on-state current relationship compared with p-ch conventional SOI-LIGBT. Furthermore, measured characteristics are reported for p-ch SOI-LIGBT with a breakdown voltage of more than 500 V for the first time.
  • Keywords
    "Insulated gate bipolar transistors","CMOS process","Voltage","Electric breakdown","Time measurement","Driver circuits","Inverters","Fabrication","Costs","Degradation"
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC´s, 1997. ISPSD ´97., 1997 IEEE International Symposium on
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-3993-2
  • Type

    conf

  • DOI
    10.1109/ISPSD.1997.601516
  • Filename
    601516
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3643433