Novel SPICE dynamic model of SiC merged PiN schottky diodes

This paper presents a novel SPICE model for SiC merged PiN Schottky diodes applicable for both dynamic and static simulations of these devices. The model takes into account the temperature dependence of device characteristics combining in a single model the behavior typical for bipolar and unipolar devices. The presented dynamic simulations of diode switching process demonstrate that the proposed model produces accurate simulations results, consistent with the measurements, whereas, the model provided by the manufacturer fails to predict properly the device behavior.