• DocumentCode
    3643482
  • Title

    Modeling of parasitic phenomena in trench technology

  • Author

    Dušan Prejda;Jiří Slezák;Stanislav Banáš

  • Author_Institution
    Device Development &
  • fYear
    2011
  • fDate
    6/1/2011 12:00:00 AM
  • Firstpage
    95
  • Lastpage
    98
  • Abstract
    The paper describes SPICE modeling of a substrate PNP transistor in a bipolar technology that makes use of trench isolation. This parasitic transistor gives rise to a significant increase of the collector current in measured output characteristics at about Vce=-2V. Measured Gummel plots also showed non-standard behavior at Vce >; -2V. A physical basis of the electrical behavior was determined and captured by a SPICE macro model.
  • Keywords
    "Integrated circuit modeling","MOSFETs","Switches","Substrates","SPICE","Data models"
  • Publisher
    ieee
  • Conference_Titel
    Mixed Design of Integrated Circuits and Systems (MIXDES), 2011 Proceedings of the 18th International Conference
  • Print_ISBN
    978-1-4577-0304-1
  • Type

    conf

  • Filename
    6016043
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3643482