DocumentCode :
3644138
Title :
Investigation of electronic properties of crystalline silicon solar cells
Author :
Martin Kusko;Vladimír Šály
Author_Institution :
Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Ilkovič
fYear :
2011
fDate :
5/1/2011 12:00:00 AM
Firstpage :
202
Lastpage :
205
Abstract :
Polycrystalline silicon solar cells use standard optimized pattern of top electrode in order of effective collection of electric charges and minimized shading. We present the results of electric measurement on polycrystalline silicon solar cells with non-standard shape of top electrode which is designed so as to follow the grain boundaries. The aim is to estimate the influence of mentioned topology. The ac measurements were performed in the dark with increased temperature influence (range from 298 to 348 K) and equivalent circuit elements were calculated using the models of complex impedance characteristics.
Keywords :
"Photovoltaic cells","Grain boundaries","Silicon","Temperature measurement","Resistance","Capacitance","Impedance"
Publisher :
ieee
Conference_Titel :
Electronics Technology (ISSE), 2011 34th International Spring Seminar on
ISSN :
2161-2528
Print_ISBN :
978-1-4577-2111-3
Electronic_ISBN :
2161-2536
Type :
conf
DOI :
10.1109/ISSE.2011.6053578
Filename :
6053578
Link To Document :
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