• DocumentCode
    3644147
  • Title

    The effects of tensile-strain conditions on doping density requirements for Ge-based injection lasers

  • Author

    O. Aldaghri;Z. Ikonić;R. W. Kelsall

  • Author_Institution
    Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, LS2 9JT, United Kingdom
  • fYear
    2011
  • Firstpage
    151
  • Lastpage
    153
  • Abstract
    The doping density required for filling the indirect valleys up to the direct valley in Ge bulk and quantum wells under various tensile-strain conditions is investigated, and the optimum cases for Ge lasers identified.
  • Keywords
    "Doping","Tensile strain","Photonic band gap","Silicon","Sun"
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2011 8th IEEE International Conference on
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4244-8338-9
  • Type

    conf

  • DOI
    10.1109/GROUP4.2011.6053746
  • Filename
    6053746
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3644147