Optimum design of an envelope tracking buck converter for RFPA using GaN HEMTs

In this paper, filter design methodology and application of GaN HEMTs for high efficiency Envelope Amplifier in RF transmitters are proposed. The main objectives of the filter design are generation of the envelope reference with the minimum possible distortion and high efficiency of the amplifier obtained by the optimum trade-off between conduction and switching losses. This optimum point was determined using power losses model for synchronous buck with sinusoidal output voltage and experimental results showed good correspondence with the model and verified the proposed methodology. On the other hand, comparing to Si MOSFETs, GaN HEMTs can provide higher efficiency of the envelope amplifier, due to superior conductivity and switching characteristics. Experimental results verified benefits of GaN devices comparing to the appliance of Si switching devices with very good Figure Of Merit, for this particular application.