DocumentCode :
36443
Title :
Compensating Modeling Overlay Errors Using the Weighted Least-Squares Estimation
Author :
Shih-Cheng Horng
Author_Institution :
Dept. of Comput. Sci. & Inf. Eng., Chaoyang Univ. of Technol., Taichung, Taiwan
Volume :
27
Issue :
1
fYear :
2014
fDate :
Feb. 2014
Firstpage :
60
Lastpage :
70
Abstract :
The lithography performed on a stepper is a key process of integrated circuit manufacturing. To have a better resolution and alignment accuracy in lithography, it is important to model the overlay errors and compensate them into tolerances. The systematic overlay errors are commonly modeled as the sum of inter-field and intra-field errors. The inter-field errors describe the global effect, while the intra-field errors indicate the local effect. In this paper, two overlay error models are introduced, and a weighted least-squares (WLS) estimator is developed to derive the more accurate linear term parameters of the overlay errors. The least-squares (LS) estimator is applied to the Arnold ten-parameter model for estimating the parameters of linear and nonlinear terms. We intend to estimate the parameters of a linear term, while taking the nonlinear term as our modeling residual errors. Then, we use the WLS estimator to derive the more accurate linear term parameters in the Perloff eight-parameter model. Finally, the WLS estimator is applied to real data collected from 453 wafers provided by a wafer fabrication facility in Taiwan. Test results demonstrate that the linear term parameters estimated by the WLS estimator are much more accurate than those obtained by the LS estimator.
Keywords :
integrated circuit manufacture; integrated circuit modelling; least squares approximations; lithography; Arnold ten-parameter model; Perloff eight-parameter model; Taiwan; WLS estimator; integrated circuit manufacturing; interfield errors; intrafield errors; linear term parameters; lithography; nonlinear terms; overlay errors modeling; residual errors; stepper; systematic overlay errors; tolerances; wafer fabrication facility; weighted least-squares estimator; Lenses; Mathematical model; Measurement uncertainty; Semiconductor device measurement; Semiconductor device modeling; Systematics; Uncertainty; Inter-field; intra-field; least-squares (LS) estimator; lithography; modeling overlay error; weighted least-squares (WLS) estimator;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2013.2243925
Filename :
6423952
Link To Document :
بازگشت