DocumentCode :
3645925
Title :
The influence of contact mode on resolution in UV 400 lithography
Author :
Kornelia Indykiewicz;Wojciech Macherzy?ski;Regina Paszkiewicz
Author_Institution :
Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17 Street, 50-372 Wroc?aw, Poland
fYear :
2011
fDate :
7/1/2011 12:00:00 AM
Firstpage :
59
Lastpage :
61
Abstract :
Optical lithography is the most popular lithographic technique in modern semiconductor manufacture. High pattern resolution is very desirable parameter in many devices. Because of that different contact methods were investigated. In the article we present influence of contact modes between the mask and the sample on pattern resolution. We defined the maximal resolution of test structures obtained for various distances of proximity contacts in optical lithography process.
Keywords :
"Lithography","Resists","Optical device fabrication","Adaptive optics","Photonics","Gold"
Publisher :
ieee
Conference_Titel :
Students and Young Scientists Workshop, 2011 International
ISSN :
1939-4381
Print_ISBN :
978-1-4577-1651-5
Type :
conf
DOI :
10.1109/STYSW.2011.6155843
Filename :
6155843
Link To Document :
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