DocumentCode
3645925
Title
The influence of contact mode on resolution in UV 400 lithography
Author
Kornelia Indykiewicz;Wojciech Macherzy?ski;Regina Paszkiewicz
Author_Institution
Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17 Street, 50-372 Wroc?aw, Poland
fYear
2011
fDate
7/1/2011 12:00:00 AM
Firstpage
59
Lastpage
61
Abstract
Optical lithography is the most popular lithographic technique in modern semiconductor manufacture. High pattern resolution is very desirable parameter in many devices. Because of that different contact methods were investigated. In the article we present influence of contact modes between the mask and the sample on pattern resolution. We defined the maximal resolution of test structures obtained for various distances of proximity contacts in optical lithography process.
Keywords
"Lithography","Resists","Optical device fabrication","Adaptive optics","Photonics","Gold"
Publisher
ieee
Conference_Titel
Students and Young Scientists Workshop, 2011 International
ISSN
1939-4381
Print_ISBN
978-1-4577-1651-5
Type
conf
DOI
10.1109/STYSW.2011.6155843
Filename
6155843
Link To Document