DocumentCode :
3645959
Title :
Dual-band millimeter-wave VCO with embedded RF-MEMS switch module in BiCMOS technology
Author :
Gang Liu;Mehmet Kaynak;Tatyana Purtova;A. Çagğri Ulusoy;Bernd Tillack;Hermann Schumacher
Author_Institution :
EBS, Ulm University, Albert-Einstein-Allee 45, 89075 Ulm, Germany
fYear :
2012
Firstpage :
175
Lastpage :
178
Abstract :
This paper presents a dual-band millimeter-wave VCO utilizing RF-MEMS switches fully integrated into a standard BiCMOS process. The switch and associated transmission line form a reconfigurable inductor in the VCO core. Depending on the state of the switch, the VCO frequency can be tuned either from 48 to 52 GHz, or from 64 to 72 GHz. The VCO provides both fundamental and frequency-divided (divide by 64) outputs, with integrated frequency dividers. The fundamental output power is 4/5 dBm and the phase noise at 1 MHz offset is -84/-86 dBc/Hz for the lower/upper bands. To the authors´ knowledge, this is the first millimeter-wave, dual-band VCO with fully integrated RF-MEMS switches.
Keywords :
"Voltage-controlled oscillators","Switches","Frequency conversion","Frequency measurement","Tuning","Switching circuits","Phase noise"
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Print_ISBN :
978-1-4577-1317-0
Type :
conf
DOI :
10.1109/SiRF.2012.6160137
Filename :
6160137
Link To Document :
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