DocumentCode
3645959
Title
Dual-band millimeter-wave VCO with embedded RF-MEMS switch module in BiCMOS technology
Author
Gang Liu;Mehmet Kaynak;Tatyana Purtova;A. Çagğri Ulusoy;Bernd Tillack;Hermann Schumacher
Author_Institution
EBS, Ulm University, Albert-Einstein-Allee 45, 89075 Ulm, Germany
fYear
2012
Firstpage
175
Lastpage
178
Abstract
This paper presents a dual-band millimeter-wave VCO utilizing RF-MEMS switches fully integrated into a standard BiCMOS process. The switch and associated transmission line form a reconfigurable inductor in the VCO core. Depending on the state of the switch, the VCO frequency can be tuned either from 48 to 52 GHz, or from 64 to 72 GHz. The VCO provides both fundamental and frequency-divided (divide by 64) outputs, with integrated frequency dividers. The fundamental output power is 4/5 dBm and the phase noise at 1 MHz offset is -84/-86 dBc/Hz for the lower/upper bands. To the authors´ knowledge, this is the first millimeter-wave, dual-band VCO with fully integrated RF-MEMS switches.
Keywords
"Voltage-controlled oscillators","Switches","Frequency conversion","Frequency measurement","Tuning","Switching circuits","Phase noise"
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Print_ISBN
978-1-4577-1317-0
Type
conf
DOI
10.1109/SiRF.2012.6160137
Filename
6160137
Link To Document