Title :
Silicon nanocrystal surface engineering and their electronic interaction with carbon based materials
Author :
V. Švrček;D. Mariotti;S. Cook;S. Kazaoui;Y. Shibata;M. Kondo
Author_Institution :
Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Umezono 1-1-1, Tsukuba, 305-8568, Japan
fDate :
6/1/2011 12:00:00 AM
Abstract :
Hybrid nanomaterials that consist of silicon nanocrystals (Si-ncs) and carbon-based nanostructures (i.e. nanotubes, fullerenes C60, etc.) may represent a new class of materials for photovoltaics (PV) with potential for improvements in efficiency and ease of device integration. In this contribution we present results on photovoltaic applications of surfactant-free, quantum confined and surface-engineered Si-ncs combined with semiconducting single walled carbon nanotubes (SWCNTs) or C60. We show that both types of carbon-based nanomaterials allow for electronic interactions with the Si-ncs. Firstly, the electronic interactions between Si-ncs and purified semiconducting SWCNTs has shown opto-electronic conversion over a large spectral range (300-1600 nm). but, in order to enhance interface interactions, the accurate control of Si-ncs surface properties is essential. Secondly, our approach to achieve effective Si-ncs surface engineering is based on nanosecond pulsed laser processing in liquid media. We provide evidence that laser processing in water induces Si-ncs dipole-dipole surface interactions that result in self-organized Si-ncs patterns. The subsequent deposition of a C60 nano-layer on the Si-ncs forms a bulk-type heterojunction. Solar cell devices made out of these surface-engineered Si-ncs and the C60 nano-layer showed photovoltaic action with increased conversion efficiency due to Si-ncs surface engineering.
Keywords :
"Silicon","Nanocrystals","Lasers","Ethanol","Surface engineering","Nanomaterials"
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6185900