Title :
Low noise as a diagnostic tool for GaSb based laser diodes prepared by Molecular Beam Epitaxy
Author :
M. Luňák;Z. Chobola;J. Vaněk;E. Hulicius
Author_Institution :
Stavební
fDate :
5/1/2012 12:00:00 AM
Abstract :
Transport and noise characteristics of forward biased semiconductor lasers diodes GaSb based VCSE (Vertical Cavity Surface Emitting) laser were prepared by MBE (Molecular Beam Epitaxy) were measured in order to evaluate the new MBE technology.
Keywords :
"Noise","Resistance","Diode lasers","Vertical cavity surface emitting lasers","Junctions"
Conference_Titel :
Microelectronics (MIEL), 2012 28th International Conference on
Print_ISBN :
978-1-4673-0237-1
DOI :
10.1109/MIEL.2012.6222870
