• DocumentCode
    3647103
  • Title

    DC measurements method of the thermal resistance of power MOSFETs

  • Author

    Krzysztof Górecki;Janusz Zarębski

  • Author_Institution
    Department of Marine Electronics, Gdynia Maritime University, Poland
  • fYear
    2012
  • fDate
    5/1/2012 12:00:00 AM
  • Firstpage
    304
  • Lastpage
    308
  • Abstract
    In this paper a new direct-current measuring method of thermal resistance of power MOS transistors is proposed. The conception of this method and the way of its realization are presented. The discussion on the influence of selected factors on the accuracy of the elaborated method is included in this paper. The correctness of the method is verified by comparing the results of measurements obtained with the use of the new method with the results obtained with the infrared method.
  • Keywords
    "Electrical resistance measurement","Thermal resistance","Temperature measurement","Semiconductor device measurement","MOSFETs"
  • Publisher
    ieee
  • Conference_Titel
    Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference
  • Print_ISBN
    978-1-4577-2092-5
  • Type

    conf

  • Filename
    6226205
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3647103