DocumentCode
3647245
Title
Planar fully depleted SOI technology: The convergence of high performance and low power towards multimedia mobile applications
Author
Bertrand Pelloux-Prayer;Milovan Blagojević;Olivier Thomas;Amara Amara;Andrei Vladimirescu;Borivoje Nikolić;Giorgio Cesana;Philippe Flatresse
Author_Institution
STMicroelectronics Crolles
fYear
2012
fDate
6/1/2012 12:00:00 AM
Firstpage
1
Lastpage
4
Abstract
Planar fully-depleted SOI technology is becoming mainstream within STMicroelectronics, targeting modern mobile and consumer multimedia markets. This technology combines high performance and low power consumption, complemented by an excellent responsiveness to power management design techniques. The fabrication process is comparatively simple and is a low-risk evolutionary step from conventional planar bulk CMOS. At 28nm, we find that planar FD more than matches the peak performance of “G”-type bulk technology, at the cost and complexity of a low-power type technology, with better power efficiency across use cases than any of the conventional bulk CMOS flavors. FD implementation of a representative design offers 1.6×-7× speedup compared to bulk across a range of supply voltages.
Keywords
"CMOS integrated circuits","Transistors","Logic gates","CMOS technology","Switches","Electrostatics","Silicon"
Publisher
ieee
Conference_Titel
Faible Tension Faible Consommation (FTFC), 2012 IEEE
Print_ISBN
978-1-4673-0822-9
Type
conf
DOI
10.1109/FTFC.2012.6231742
Filename
6231742
Link To Document