Deep-UV Lithographic Approaches For 1 Gb DRAM

Author

Wong; Farrell; Ferguson; Lut; Mansfield; Molless; Neisser; Nunes; Samuels; Thomas

Author_Institution

IBM Semiconductor Research and Development Center, Hopewell Junction, NY 12533, USA

fYear

1997

fDate

6/19/1905 12:00:00 AM

Firstpage

127

Lastpage

128

Keywords

"Lighting","Resists","Standards","Random access memory","Lithography","Optimization","Arrays"

Publisher

ieee

Conference_Titel

VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on

Print_ISBN

4-930813-75-1

Type

DOI

10.1109/VLSIT.1997.623731

Filename

623731

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