• DocumentCode
    3647783
  • Title

    Integration of a k=2.3 spin-on polymer for the sub-28nm technology node using EUV lithography

  • Author

    C. J. Wilson;F. Lazzarino;V. Truffert;T. Kirimura;J-F. de Marneffe;P. Verdonck;M. Hirai;K. Nakatani;M. Tada;N. Heylen;Z. El-Mekki;K. Vanstreels;E. Van Besien;I. Ciofi;M. Stucchi;K. Croes;L. Zhang;S. Demuynck;M. Ercken;K. Xu;M. Baklanov;Zs. Tőkei

  • Author_Institution
    Imec, Kapeldreef 75, B-3001 Leuven, Belgium
  • fYear
    2012
  • fDate
    6/1/2012 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this work we integrate an advanced k=2.3 spin-on polymer at 40nm ½ pitch. K-value restoration techniques are investigated and complete k-value restoration is demonstrated using an in-situ HeH2 plasma. An EUV compatible stack and a dielectric dual hard mask scheme is developed to pattern trenches with good uniformity and low litho-etch bias. The impact of scaling the dielectric spacing and of direct CMP on time dependent dielectric breakdown is also studied.
  • Keywords
    "Plasmas","Slurries","Dielectrics","Electric breakdown","Capacitance","Polymers"
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference (IITC), 2012 IEEE International
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-1138-0
  • Type

    conf

  • DOI
    10.1109/IITC.2012.6251566
  • Filename
    6251566
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3647783