DocumentCode :
3647786
Title :
A parallel tool for the simulation of thermal oxidation and diffusion processes
Author :
M.G. Hackenberg;W. Joppich;T. Sontowski;S. Mijalkovic
Author_Institution :
German Nat. Res. Center for Inf. Technol., St. Augustin, Germany
Volume :
1
fYear :
1997
Firstpage :
35
Abstract :
The gradually increasing complexity of the processing models and the necessity to simulate in higher dimensions persistently challenge computational efficiency of the modern process simulators. In this paper, a general parallel PDE solver is presented, which has been adapted to the solution of so-called coupled problems. This software tool is not intended to be a process simulator. But as the typical thermal processes in VLSI process simulation can be considered as coupled problems, the program has been applied to this important class of applications. It is used to investigate existing and to develop new approaches.
Keywords :
"Oxidation","Diffusion processes","Semiconductor process modeling","Silicon compounds","Differential equations","Impurities","Geometry","Partial differential equations","Material properties","Electric potential"
Publisher :
ieee
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Print_ISBN :
0-7803-3664-X
Type :
conf
DOI :
10.1109/ICMEL.1997.625175
Filename :
625175
Link To Document :
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