Electronic deformation mechanism in frequency transmission photoacoustic effect in semiconductors

For semiconductor materials with good elastic characteristics the influence of the electronic deformation (electronic strain) mechanisms to the photoacoustic effect is analyzed. The photoacoustic signal is investigated as a function of the modulation frequency in a transmission detection configuration and a theoretical model for this configuration is given for the thermal and elastic processes besides the carrier transport characteristics. The experimental photoacoustic data for Si-samples are tested and they exhibit satisfactory agreement with the theoretical model.