Spatial distribution of free-carriers in GaAs films

Free carriers in thin films was analysed using Green´s function method including quantum size effect and effect of boundaries to Hamiltonian parameters. We calculate diagonal components of electron Green´s functions, local densities of states, Fermi energy and spatial distribution of carriers concentration in thin film. The numerical calculations performed for GaAs films show that spatial distribution of free carriers may be manipulated by varying the surface parameters which is significant for operation of devices based on thin films.